BSC010NE2LSIATMA1 vs BSZ011NE2LS5IATMA1 Vergleich

Detaillierter Direktvergleich von BSC010NE2LSIATMA1 von Infineon und BSZ011NE2LS5IATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSC010NE2LSIATMA1 BSZ011NE2LS5IATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $0,55
Manufacturer Infineon Technologies —
Series / Family OptiMOS 25V —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA 38 A —
Continuous Drain Current (ID) at TC 100 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 96 W —
Gehäuse PG-TDSON-8-7 (TDSON-8 EP) PG-TSDSON-8-34 (PQFN 3.3x3.3 mm)
Montageart Surface Mount Surface Mount
Configuration Single N-Channel —
Technology OptiMOS (Trench) OptiMOS 5 (Trench)
Betriebstemperaturbereich -55C to +150C (TJ) -55°C to +150°C
Pin-Anzahl 8 —
RoHS-Status Compliant Compliant
Gate Drive Logic-level compatible —
MSL-Level [DATA_NEEDED: MSL rating] MSL1 (per JEDEC J-STD-020)
Rds(on) at 10V [DATA_NEEDED: Rds(on) at VGS=10V] —
Rds(on) at 4.5V [DATA_NEEDED: Rds(on) at VGS=4.5V] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 35 A
Continuous Drain Current (ID) at TC=25°C — 40 A
On-State Resistance RDS(on) max at VGS=10 V — 1.1 mΩ (typical, per datasheet title)
Power Dissipation at TA=25°C — 2.1 W
Power Dissipation at TC=25°C — 69 W
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (typical 1.5 V)
Gate Drive Voltage (recommended) — 4.5 V to 10 V
Lead-Free — Yes
Halogenfrei — Yes

Datenblätter & Ressourcen

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