BSC010NE2LSIATMA1 vs BSZ011NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of BSC010NE2LSIATMA1 by Infineon and BSZ011NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC010NE2LSIATMA1
BSC010NE2LSIATMA1 - 25V 100A N-Ch OptiMOS MOSFET | Infineon
BSC010NE2LSIATMA1 β ActiveInfineon
BSZ011NE2LS5IATMA1
BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | BSC010NE2LSIATMA1 | BSZ011NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.55 |
| Manufacturer | Infineon Technologies | β |
| Series / Family | OptiMOS 25V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA | 38 A | β |
| Continuous Drain Current (ID) at TC | 100 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 96 W | β |
| Package | PG-TDSON-8-7 (TDSON-8 EP) | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | β |
| Technology | OptiMOS (Trench) | OptiMOS 5 (Trench) |
| Operating Temperature Range | -55C to +150C (TJ) | -55Β°C to +150Β°C |
| Pin Count | 8 | β |
| RoHS Status | Compliant | Compliant |
| Gate Drive | Logic-level compatible | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL1 (per JEDEC J-STD-020) |
| Rds(on) at 10V | [DATA_NEEDED: Rds(on) at VGS=10V] | β |
| Rds(on) at 4.5V | [DATA_NEEDED: Rds(on) at VGS=4.5V] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25Β°C | β | 35 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 40 A |
| On-State Resistance RDS(on) max at VGS=10 V | β | 1.1 mΞ© (typical, per datasheet title) |
| Power Dissipation at TA=25Β°C | β | 2.1 W |
| Power Dissipation at TC=25Β°C | β | 69 W |
| Gate Threshold Voltage VGS(th) | β | 1.0 V to 2.0 V (typical 1.5 V) |
| Gate Drive Voltage (recommended) | β | 4.5 V to 10 V |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |