BSC074N15NS5ATMA1 vs IRLU3410PBF Vergleich
Detaillierter Direktvergleich von BSC074N15NS5ATMA1 von Infineon und IRLU3410PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC074N15NS5ATMA1 | IRLU3410PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,45 | $0,36 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 trench | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 114 A | — |
| Power Dissition (PD) at TC=25°C | 214 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 7.4 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gehäuse | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks | I-PAK (TO-251AA), through-hole |
| Montageart | Surface Mount | Through Hole |
| Betriebstemperaturbereich | [DATA_NEEDED: TJ min/max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| RoHS-Status | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL rating] | — |
| Body Diode | Integrated | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number | — | IRLU3410PBF |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 17 A |
| Continuous Drain Current (ID) at Tc=100C | — | 12 A |
| Drain-to-Source On-Resistance (RDS(on)) | — | 105 mOhm at VGS=10 V |
| Total Gate Charge (Qg) | — | 22.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 79 W |
| Gate Threshold Voltage (VGS(th)) | — | Logic level |
| Betriebs-Sperrschichttemperatur | — | -55 C to +175 C |
| Avalanche Rated | — | Yes |
| RoHS / Lead-Free | — | Compliant (Pb-free) |
| HEXFET Generation | — | Fifth generation |