BSC074N15NS5ATMA1 vs IRLU3410PBF Comparison
Detailed side-by-side comparison of BSC074N15NS5ATMA1 by Infineon and IRLU3410PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC074N15NS5ATMA1 | IRLU3410PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 trench | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25°C | 114 A | — |
| Power Dissition (PD) at TC=25°C | 214 W | — |
| On-Resistance RDS(on) max @ VGS=10V | 7.4 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Package | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks | I-PAK (TO-251AA), through-hole |
| Mounting Type | Surface Mount | Through Hole |
| Operating Temperature Range | [DATA_NEEDED: TJ min/max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| RoHS Status | Compliant | — |
| MSL Level | [DATA_NEEDED: MSL rating] | — |
| Body Diode | Integrated | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number | — | IRLU3410PBF |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 17 A |
| Continuous Drain Current (ID) at Tc=100C | — | 12 A |
| Drain-to-Source On-Resistance (RDS(on)) | — | 105 mOhm at VGS=10 V |
| Total Gate Charge (Qg) | — | 22.7 nC |
| Power Dissipation (PD) at Tc=25C | — | 79 W |
| Gate Threshold Voltage (VGS(th)) | — | Logic level |
| Operating Junction Temperature | — | -55 C to +175 C |
| Avalanche Rated | — | Yes |
| RoHS / Lead-Free | — | Compliant (Pb-free) |
| HEXFET Generation | — | Fifth generation |