BSC076N06NS3GATMA1 vs BSC117N08NS5ATMA1 Vergleich
Detaillierter Direktvergleich von BSC076N06NS3GATMA1 von Infineon und BSC117N08NS5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSC076N06NS3GATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25C | 50 A | — |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: Qg value] |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 69 W | 50 W |
| Betriebstemperaturbereich | -55C to +150C | -55 C to +150 C (typical MOSFET junction) |
| Gehäuse | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 (unlimited) | 1 |
| RoHS Compliance | Compliant | — |
| Halogenfrei | Yes (per Infineon product page) | — |
| Part Number | — | BSC117N08NS5ATMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Pin-Anzahl | — | 8 |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |