BSC076N06NS3GATMA1 vs BSC117N08NS5ATMA1 对比

详细并排对比 BSC076N06NS3GATMA1 出自 Infineon 和 BSC117N08NS5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 ✓ 量产中
Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ 量产中

规格对比

参数 BSC076N06NS3GATMA1 BSC117N08NS5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.65 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET OptiMOS 5
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ —
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg value]
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 50 W
工作温度范围 -55C to +150C -55 C to +150 C (typical MOSFET junction)
封装 PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
安装类型 Surface Mount Surface Mount
MSL 等级 1 (unlimited) 1
RoHS Compliance Compliant —
无卤 Yes (per Infineon product page) —
Part Number — BSC117N08NS5ATMA1
晶体管类型 — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) max — 49 A (Tc)
On-State Resistance (RDS(on)) max — 11.7 mOhm
引脚数量 — 8
RoHS 状态 — Compliant
Lead-Free — Yes

数据手册与资源

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