BSC076N06NS3GATMA1 vs BSC117N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSC076N06NS3GATMA1 by Infineon and BSC117N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC117N08NS5ATMA1

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSC076N06NS3GATMA1 BSC117N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 β€”
Technology N-Channel Trench MOSFET OptiMOS 5
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at TC=25C 50 A β€”
On-Resistance RDS(on) max at VGS=10V 7.6 mΞ© β€”
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg value]
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W 50 W
Operating Temperature Range -55C to +150C -55 C to +150 C (typical MOSFET junction)
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) 1
RoHS Compliance Compliant β€”
Halogen-Free Yes (per Infineon product page) β€”
Part Number β€” BSC117N08NS5ATMA1
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) max β€” 80 V
Continuous Drain Current (ID) max β€” 49 A (Tc)
On-State Resistance (RDS(on)) max β€” 11.7 mOhm
Pin Count β€” 8
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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