BSC0901NSIATMA1 vs IRFH5015TRPBF Vergleich
Detaillierter Direktvergleich von BSC0901NSIATMA1 von Infineon und IRFH5015TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC0901NSIATMA1 | IRFH5015TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,62 |
| Technology | OptiMOS 25V N-Channel Power MOSFET | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10V | 2.0 mOhm typical | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2.2 V max | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge nC] | 33 nC |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc | 69 W | — |
| Betriebstemperaturbereich | -55 C to +150 C | — |
| Gehäuse | PG-TDSON-8-6 (5x6 mm with exposed pad) | 8-PQFN (5x6) SuperSO8 |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 10 A |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Betriebstemperatur | — | -55C to +150C (TJ max) |