BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon
Teilenummer: BSC0901NSIATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.84 | $0,84 |
| 10 | $0.72 | $7,20 |
| 100 | $0.59 | $59,00 |
| 500 | $0.51 | $255,00 |
| 1.000 | $0.45 | $450,00 |
| 5.000 | $0.38 | $1.900,00 |
BSC0901NSIATMA1 Übersicht
A power MOSFET is a voltage-controlled switching device that uses an insulated gate to modulate current flow between drain and source terminals. Within the broader semiconductor taxonomy, MOSFETs belong to the discrete power transistor family alongside IGBTs and BJTs, and OptiMOS 25V specifically targets low-voltage, high-current synchronous rectification and hot-swap applications. The PG-TDSON-8-6 package family is a member of the SON/QFN-style surface-mount family, with a large exposed thermal pad enabling low junction-to-case thermal resistance for compact high-power-density designs.
Key features include 30 V drain-source breakdown, 100 A pulsed drain current at Tc, 2 mOhm max R_DS(on) at 10 V VGS, 2.2 V maximum threshold voltage, and an integrated gate-source ESD protection structure. The OptiMOS 25V technology provides a figure-of-merit that combines low switching losses with low conduction losses - critical for MHz-class switching converters. The TDSON-8 footprint has a 5x6 mm body with an exposed drain pad that doubles as the thermal dissipation surface.
Typical applications include server voltage regulator modules (VRMs), synchronous buck converters in datacom/telecom point-of-load regulators, hot-swap controllers, and battery protection in 12 V Li-ion packs. The 30 V rating also covers 24 V industrial bus rails with adequate transient headroom.
When designing with this device, minimize high-frequency gate-loop inductance by keeping the gate drive return path directly over the source pad. A 10 V gate drive is recommended to fully enhance the channel; using 4.5 V gate drive increases R_DS(on) by roughly 2x. Always verify SOA against your actual switching profile and PCB thermal performance - the data above summarizes a design survey, not a substitute for a full bench characterization.
Drop-in-Alternativen für BSC0901NSIATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSC0901NSIATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, Configuration, Operating Temperature Range, Continuous Drain Current (ID) at TA=25C.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSC0901NSATMA1
✅ Drop-In✓ Auf Lager
$0.78 / Stück
Datenblatt ansehen →BSC0902NSIATMA1
✅ Drop-In✓ Auf Lager
$0.32 / Stück
Datenblatt ansehen →BSC050N04LSGATMA1
✅ Drop-In✓ Auf Lager
$0.41 / Stück
Datenblatt ansehen →IRLB3034PBF
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRFH5015TRPBF
✅ Drop-In✓ Auf Lager
$0.62 / Stück
Datenblatt ansehen →BSC076N04NDATMA1
✅ Drop-In✓ Auf Lager
$0.82 / Stück
Datenblatt ansehen →BSC0901NSIATMA1 Grenzwerte & elektrische Eigenschaften
| Technology | OptiMOS 25V N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 28 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| On-State Resistance (RDS(on)) at VGS=10V | 2.0 mOhm typical |
| Gate-Source Threshold Voltage (VGS(th)) | 2.2 V max |
| Power Dissipation (PD) at Ta=25C | 2.5 W |
| Power Dissipation (PD) at Tc | 69 W |
| Betriebstemperaturbereich | -55 C to +150 C |
| Gehäuse | PG-TDSON-8-6 (5x6 mm with exposed pad) |
| Montageart | Surface Mount |
| Pin-Anzahl | 8 |
| MSL-Level | 1 |
| RoHS-Status | Compliant |
| Halogenfrei | Yes |
BSC0901NSIATMA1 Pin-Konfiguration
| Pin 1 | Source — Source terminal (connects to Kelvin source internally) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate terminal |
| Pin 5 | Drain — Drain terminal (also exposed pad) |
| Pin 6 | Drain — Drain terminal (also exposed pad) |
| Pin 7 | Drain — Drain terminal (also exposed pad) |
| Pin 8 | Drain — Drain terminal (also exposed pad) |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
BSC0901NSIATMA1 ist geeignet für 7 Anwendungs: Server VRM Synchronous Buck, Telecom Point-of-Load Converter, Hot-Swap / eFuse Controller, Battery Protection in 12 V Li-ion Packs, Industrial 24 V Bus Switching, DC Motor Drive H-Bridge, USB-PD / Type-C Power Path.
Server VRM Synchronous Buck
The BSC0901NSIATMA1 fits server VRM multi-phase buck converters that step 12 V down to 0.8-1.8 V for CPUs, GPUs, and ASICs. The 2.0 mOhm R_DS(on) at 10 V VGS keeps conduction loss under 1.2 W at 25 A, while the 100 A pulsed rating handles load-transient overshoot without tripping OCP. Placed as the low-side synchronous FET with a complementary driver such as IR2110SPBF, the TDSON-8-6 footprint enables very compact per-phase layouts. Compared with older 40 V parts in this footprint, the 30 V rating of the BSC0901NSIATMA1 avoids the body-diode reverse-recovery penalty that hurts efficiency in 12 V-input designs.
Empfohlen
Telecom Point-of-Load Converter
In 48 V-to-12 V or 12 V-to-3.3 V point-of-load converters for telecom boards, the BSC0901NSIATMA1 delivers the current density needed for high-density POL bricks. Its 30 V VDS rating provides more than 2x headroom on 12 V rails, and the 2.2 V VGS(th) ensures clean turn-on with industry-standard 5 V/10 V gate-drive logic. The exposed drain pad enables top-side cooling in dense PCB layouts where a heatsink is impractical. Designers pair the BSC0901NSIATMA1 with digital point-of-load controllers to build 25-40 A bricks in less than 1 square inch of board area.
Empfohlen
Hot-Swap / eFuse Controller
The BSC0901NSIATMA1 is well suited as the pass element in 12 V hot-swap and eFuse designs where it must sustain inrush currents up to 100 A pulsed while maintaining safe operating area. Its 30 V VDS and 2 mOhm R_DS(on) limit both steady-state voltage drop and heat rise during fault events. Combined with a hot-swap controller such as BTS70402EPGXUMA1 or ADM1177, it provides programmable current limiting, fault indication, and latch-off behavior. The TDSON-8-6 package fits the 5x6 mm land pattern commonly used in compact hot-swap modules.
Empfohlen
Battery Protection in 12 V Li-ion Packs
In 12 V Li-ion battery packs where the FET must remain off for long periods and conduct up to 25 A during discharge, the BSC0901NSIATMA1's 2.2 V VGS(th) ensures the device stays fully off with zero gate drive, and its 2 mOhm R_DS(on) at 10 V VGS keeps discharge conduction loss under 1.3 W at 25 A. The 30 V VDS rating covers pack voltages up to 12S configurations with transient margin. Battery-management ICs such as the TLE9012 or similar AFEs control the gate of the BSC0901NSIATMA1 to provide overcurrent, short-circuit, and over-temperature protection.
Empfohlen
Industrial 24 V Bus Switching
The BSC0901NSIATMA1 handles 24 V industrial bus rail switching in PLCs, motor drives, and factory-automation I/O modules. While its 30 V VDS only provides 6 V headroom above a nominal 24 V rail, this is sufficient for properly designed industrial systems where transient clamping is in place. Its 28 A continuous current at 25 C ambient and exposed thermal pad support sustained high-current loads typical of motor-driver pre-regulators. Designers use it as the high-side switch driven by an isolated gate driver such as 1ED020I12B2XUMA1.
Empfohlen
DC Motor Drive H-Bridge
In small DC motor drive H-bridges for robotics, drones, and industrial actuators, the BSC0901NSIATMA1 serves as the high-current low-side FET. Its 2 mOhm R_DS(on) limits I2R loss during PWM switching at 25 kHz, and its 100 A pulsed rating handles motor stall currents. The TDSON-8-6 footprint enables compact half-bridge layouts, and a complementary half-bridge driver such as the IRS2110SPBF or 2EDR8258XXUMA1 provides the dead-time and shoot-through protection essential for motor control. The 30 V VDS supports 24 V motor supplies with adequate transient margin.
Empfohlen
USB-PD / Type-C Power Path
In USB-PD and Type-C power path applications up to 100 W (20 V / 5 A), the BSC0901NSIATMA1 functions as the protection and load-switch element. Its 30 V VDS provides 10 V of headroom above the 20 V PD rail, and its 2 mOhm R_DS(on) keeps voltage drop below 10 mV at 5 A, preserving the 5 A current advertisement within the USB-PD tolerance. The exposed pad enables compact layouts required by Type-C connectors. Designers pair it with port controllers such as FUSB302 or EZ-PD CCG3PA to build self-protected power-path modules.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSC0901NSIATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSC0901NS | BSC0902NSIATMA1 | BSC050N04LSGATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 (5x6 mm) | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 30 V | 40 V | 40 V |
| Continuous Drain Current (ID at Ta) | 28 A | 28 A | 25 A | 30 A | 32 A |
| RDS(on) at VGS=10V | 2.0 mOhm | 2.0 mOhm | 2.5 mOhm | 5.0 mOhm | 7.6 mOhm |
| Gate-Source Threshold Voltage (VGS(th) max) | 2.2 V | 2.2 V | 2.2 V | 2.2 V | 2.0 V |
| Power Dissipation (PD at Ta=25C) | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W |
| Technology Family | OptiMOS 25V | OptiMOS 25V | OptiMOS 25V | OptiMOS 40V | OptiMOS 40V |
Wichtigste Unterscheidungsmerkmale
- Lowest R_DS(on) in the OptiMOS 25V TDSON-8-6 family (vs. BSC0902NSIATMA1)
- Lower-voltage OptiMOS option vs 40V family (vs. BSC050N04LSGATMA1)
- Drop-in TDSON-8-6 footprint with proven Infineon OptiMOS quality (vs. BSC076N04NDATMA1)
Designhinweise
Estimated: At ID=25 A and RDS(on)=2 mOhm, conduction loss is approximately P=I^2*R = 1.25 W per device. The PG-TDSON-8-6 package has a typical theta_JA of 50 C/W on a standard JEDEC test board, which gives 62 C junction temperature rise - well within the 150 C limit. For sustained operation above 3 W, expand the PCB copper pour around the exposed pad to 1-2 square inches on both layers, and consider thermal vias to the inner/outer copper planes.
Place the gate-driver output as close as possible to the gate pad (pin 4) to minimize gate-loop inductance. A 5-10 ohm gate resistor dampens ringing, and a small (1-10 nF) ceramic bypass capacitor from VDRV to PGND placed within 2 mm of the IC helps. The exposed pad (pins 5-8) must be soldered to a sufficiently large copper pour - this is both the primary electrical drain terminal and the primary thermal path. Missing or undersized drain-pad solder connections cause severe self-heating.
Estimated: gate-loop inductance should be kept below 5 nH to avoid VGS overshoot during fast switching. Route the high-current loop (input cap -> high-side FET -> low-side FET -> input cap) in a tight, low-inductance pattern. Use 4+ layer PCB with a continuous ground plane under the FET for return-path integrity. Place the input decoupling capacitor within 1-2 mm of the drain-source terminals to minimize switching-loop inductance.
Do not operate the BSC0901NSIATMA1 with VGS below 4.5 V for high-current applications - the R_DS(on) approximately doubles at 4.5 V compared with 10 V, drastically increasing conduction loss. Do not exceed 30 V VDS under any transient condition including avalanche - the part is not rated for repetitive avalanche operation. Always check the absolute maximum ratings against your worst-case transient, including inductive load switching and ringing from the synchronous rectifier.
Compliance-Informationen
RoHS and halogen-free per Infineon product page. Not AEC-Q100 qualified - this is an industrial/commercial part. For automotive, evaluate AEC-Q100 qualified siblings in the OptiMOS family.
