BSD214SNH6327XTSA1 vs BSO613SPVGXUMA1 Vergleich
Detaillierter Direktvergleich von BSD214SNH6327XTSA1 von Infineon und BSO613SPVGXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSD214SNH6327XTSA1 | BSO613SPVGXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,27 | $0,98 |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS | OptiMOS (Trench) |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) at 25C | 1.5 A | — |
| Power Dissipation (Pd) at Ta | 500 mW | — |
| Gate Drive Voltage (Rds On rated) | 2.5 V, 4.5 V | — |
| Rds On (Max) @ Vgs=4.5V | [DATA_NEEDED: Rds On at Vgs=4.5V] | — |
| Rds On (Max) @ Vgs=2.5V | [DATA_NEEDED: Rds On at Vgs=2.5V] | — |
| Vgs(th) (typical) | [DATA_NEEDED: Vgs threshold typical] | — |
| Gehäuse | SOT-363 (PG-SOT363-PO), 6-pin | PG-DSO-8-6 (Power-SO-8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TA=25C | — | -3.44 A |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) max at VGS=4.5V] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-V] |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes (per Infineon OptiMOS family) |
| Pin-Anzahl | — | 8 (6 active, 2 thermal/NC) |