BSD214SNH6327XTSA1 vs BSO613SPVGXUMA1 对比

详细并排对比 BSD214SNH6327XTSA1 出自 Infineon 和 BSO613SPVGXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSD214SNH6327XTSA1 BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 - 20V N-Ch OptiMOS 1.5A | Infineon SOT-363

BSD214SNH6327XTSA1 ✓ 量产中

规格对比

参数 BSD214SNH6327XTSA1 BSO613SPVGXUMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.27 $0.98
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide), OptiMOS OptiMOS (Trench)
Drain-to-Source Voltage (Vdss) 20 V —
Continuous Drain Current (Id) at 25C 1.5 A —
Power Dissipation (Pd) at Ta 500 mW —
Gate Drive Voltage (Rds On rated) 2.5 V, 4.5 V —
Rds On (Max) @ Vgs=4.5V [DATA_NEEDED: Rds On at Vgs=4.5V] —
Rds On (Max) @ Vgs=2.5V [DATA_NEEDED: Rds On at Vgs=2.5V] —
Vgs(th) (typical) [DATA_NEEDED: Vgs threshold typical] —
封装 SOT-363 (PG-SOT363-PO), 6-pin PG-DSO-8-6 (Power-SO-8)
安装类型 Surface Mount Surface Mount
工作温度范围 -55C to +150C (junction) -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs)
Automotive Qualification AEC-Q101 qualified —
Lead Plating Pb-free —
RoHS 状态 Compliant Compliant
MSL 等级 1 MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8)
Standard Pack Quantity 3000 (Tape & Reel) —
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) at TA=25C — -3.44 A
Power Dissipation (PD) at TA=25C — 2.5 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max values]
RDS(on) at VGS=10V — [DATA_NEEDED: RDS(on) max at VGS=10V]
RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) max at VGS=4.5V]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max +/-V]
Lead-Free — Yes
Avalanche Rated — Yes (per Infineon OptiMOS family)
引脚数量 — 8 (6 active, 2 thermal/NC)

数据手册与资源

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