BSD214SNH6327XTSA1 vs BSO613SPVGXUMA1 Comparaison
Comparaison détaillée côte à côte de BSD214SNH6327XTSA1 par Infineon et BSO613SPVGXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSD214SNH6327XTSA1 | BSO613SPVGXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,27 | $0,98 |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS | OptiMOS (Trench) |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) at 25C | 1.5 A | — |
| Power Dissipation (Pd) at Ta | 500 mW | — |
| Gate Drive Voltage (Rds On rated) | 2.5 V, 4.5 V | — |
| Rds On (Max) @ Vgs=4.5V | [DATA_NEEDED: Rds On at Vgs=4.5V] | — |
| Rds On (Max) @ Vgs=2.5V | [DATA_NEEDED: Rds On at Vgs=2.5V] | — |
| Vgs(th) (typical) | [DATA_NEEDED: Vgs threshold typical] | — |
| Boîtier | SOT-363 (PG-SOT363-PO), 6-pin | PG-DSO-8-6 (Power-SO-8) |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | -55C to +150C (junction) | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TA=25C | — | -3.44 A |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) max at VGS=4.5V] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-V] |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes (per Infineon OptiMOS family) |
| Nombre de broches | — | 8 (6 active, 2 thermal/NC) |