BSD214SNH6327XTSA1 vs BSO613SPVGXUMA1 Comparação
Comparação detalhada lado a lado de BSD214SNH6327XTSA1 por Infineon e BSO613SPVGXUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | BSD214SNH6327XTSA1 | BSO613SPVGXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,27 | $0,98 |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS | OptiMOS (Trench) |
| Drain-to-Source Voltage (Vdss) | 20 V | — |
| Continuous Drain Current (Id) at 25C | 1.5 A | — |
| Power Dissipation (Pd) at Ta | 500 mW | — |
| Gate Drive Voltage (Rds On rated) | 2.5 V, 4.5 V | — |
| Rds On (Max) @ Vgs=4.5V | [DATA_NEEDED: Rds On at Vgs=4.5V] | — |
| Rds On (Max) @ Vgs=2.5V | [DATA_NEEDED: Rds On at Vgs=2.5V] | — |
| Vgs(th) (typical) | [DATA_NEEDED: Vgs threshold typical] | — |
| Encapsulamento | SOT-363 (PG-SOT363-PO), 6-pin | PG-DSO-8-6 (Power-SO-8) |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | -55C to +150C (junction) | -55C to +150C (junction, per industry standard for Power-SO-8 MOSFETs) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| Status RoHS | Compliant | Compliant |
| Nível MSL | 1 | MSL3 (per JEDEC J-STD-020, industry standard for Power-SO-8) |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) at TA=25C | — | -3.44 A |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| RDS(on) at VGS=10V | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| RDS(on) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) max at VGS=4.5V] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-V] |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes (per Infineon OptiMOS family) |
| Contagem de pinos | — | 8 (6 active, 2 thermal/NC) |