BSD235CH6327XTSA1 vs BSL308CH6327XTSA1 Vergleich

Detaillierter Direktvergleich von BSD235CH6327XTSA1 von Infineon und BSL308CH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSD235CH6327XTSA1 BSL308CH6327XTSA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,12 $0,21
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) 20 V 30 V
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW 500 mW
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Montageart Surface Mount Surface Mount
Technology OptiMOS™ low-voltage —
Betriebstemperaturbereich -55 °C to +150 °C (junction) -55 °C to +150 °C
Polarity N-channel + P-channel —
Channel Mode Enhancement —
RoHS-Status Compliant (lead-free) Compliant
MSL-Level 1 1 (per JEDEC J-STD-020)
Pin-Anzahl 6 —
Product Family — OptiMOS™ low-voltage power MOSFETs
Gehäuse — PG-TSOP6-6 (TSOP-6, 6 pins)
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes
Halogenfrei — Yes (per Infineon product family convention)

Datenblätter & Ressourcen

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