BSD235CH6327XTSA1 vs BSL308CH6327XTSA1 Comparación
Comparación detallada lado a lado de BSD235CH6327XTSA1 por Infineon y BSL308CH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ Activo
Comparación de especificaciones
| Parámetro | BSD235CH6327XTSA1 | BSL308CH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,12 | $0,21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS™ | — |
| Configuration | N+P complementary dual MOSFET | Complementary dual MOSFET (1 N-channel + 1 P-channel) |
| Drain-to-Source Voltage (VDS) | 20 V | 30 V |
| N-Channel Continuous Drain Current (ID) | 950 mA | — |
| P-Channel Continuous Drain Current (ID) | 530 mA (negative polarity) | — |
| Total Power Dissipation (Ptot) | 500 mW | 500 mW |
| Package Type | PG-SOT363-6-1 (SOT-363, 6-pin) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS™ low-voltage | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (junction) | -55 °C to +150 °C |
| Polarity | N-channel + P-channel | — |
| Channel Mode | Enhancement | — |
| Estado RoHS | Compliant (lead-free) | Compliant |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| Recuento de pines | 6 | — |
| Product Family | — | OptiMOS™ low-voltage power MOSFETs |
| Encapsulado | — | PG-TSOP6-6 (TSOP-6, 6 pins) |
| Continuous Drain Current - N-channel (ID, N-ch) | — | 2.3 A |
| Continuous Drain Current - P-channel (ID, P-ch) | — | 2 A |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance N-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) N-ch] |
| On-State Resistance P-channel (RDS(on) @ VGS=10V) | — | [DATA_NEEDED: RDS(on) P-ch] |
| Total Gate Charge (Qg) | — | 5 nC @ 10 V |
| Input Capacitance (Ciss) | — | 18 pF |
| Automotive Qualified | — | Yes (per Infineon part-number suffix, automotive grade) |
| Lead-Free | — | Yes |
| Sin halógenos | — | Yes (per Infineon product family convention) |