BSD235CH6327XTSA1 vs BSL308CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSL308CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSD235CH6327XTSA1

BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™

BSD235CH6327XTSA1 ✓ Active

Specification Comparison

Parameter BSD235CH6327XTSA1 BSL308CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.12 $0.21
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™
Configuration N+P complementary dual MOSFET Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) 20 V 30 V
N-Channel Continuous Drain Current (ID) 950 mA
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity)
Total Power Dissipation (Ptot) 500 mW 500 mW
Package Type PG-SOT363-6-1 (SOT-363, 6-pin)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS™ low-voltage
Operating Temperature Range -55 °C to +150 °C (junction) -55 °C to +150 °C
Polarity N-channel + P-channel
Channel Mode Enhancement
RoHS Status Compliant (lead-free) Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
Pin Count 6
Product Family OptiMOS™ low-voltage power MOSFETs
Package PG-TSOP6-6 (TSOP-6, 6 pins)
Continuous Drain Current - N-channel (ID, N-ch) 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) 2 A
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value]
On-State Resistance N-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) 5 nC @ 10 V
Input Capacitance (Ciss) 18 pF
Automotive Qualified Yes (per Infineon part-number suffix, automotive grade)
Lead-Free Yes
Halogen-Free Yes (per Infineon product family convention)

Datasheets & Resources

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