BSD235CH6327XTSA1 vs BSL308CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSD235CH6327XTSA1 by Infineon and BSL308CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSD235CH6327XTSA1 BSL308CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS™ —
Configuration N+P complementary dual MOSFET Complementary dual MOSFET (1 N-channel + 1 P-channel)
Drain-to-Source Voltage (VDS) 20 V 30 V
N-Channel Continuous Drain Current (ID) 950 mA —
P-Channel Continuous Drain Current (ID) 530 mA (negative polarity) —
Total Power Dissipation (Ptot) 500 mW 500 mW
Package Type PG-SOT363-6-1 (SOT-363, 6-pin) —
Mounting Type Surface Mount Surface Mount
Technology OptiMOS™ low-voltage —
Operating Temperature Range -55 °C to +150 °C (junction) -55 °C to +150 °C
Polarity N-channel + P-channel —
Channel Mode Enhancement —
RoHS Status Compliant (lead-free) Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
Pin Count 6 —
Product Family — OptiMOS™ low-voltage power MOSFETs
Package — PG-TSOP6-6 (TSOP-6, 6 pins)
Continuous Drain Current - N-channel (ID, N-ch) — 2.3 A
Continuous Drain Current - P-channel (ID, P-ch) — 2 A
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance N-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) N-ch]
On-State Resistance P-channel (RDS(on) @ VGS=10V) — [DATA_NEEDED: RDS(on) P-ch]
Total Gate Charge (Qg) — 5 nC @ 10 V
Input Capacitance (Ciss) — 18 pF
Automotive Qualified — Yes (per Infineon part-number suffix, automotive grade)
Lead-Free — Yes
Halogen Free — Yes (per Infineon product family convention)

Datasheets & Resources

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