BSP88H6327XTSA1 vs BSP92PH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP88H6327XTSA1 von Infineon und BSP92PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP88H6327XTSA1 | BSP92PH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,21 | $0,31 |
| Transistortyp | N-Channel MOSFET | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 240 V | -250 V |
| Continuous Drain Current (ID) | 350 mA at Ta=25 C | -260 mA (Ta) |
| Power Dissipation (PD) | 1.8 W at Ta=25 C | 1.8 W (Ta) |
| Gehäuse | PG-SOT223-4 (SOT-223-3) | PG-SOT223-4 (SOT-223-4) |
| Montageart | Surface Mount | Surface Mount |
| On-State Resistance (RDS(on)) | 6 ohm typical at VGS=10 V | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Configuration | Single | — |
| Betriebstemperatur | -55 C to +150 C | -55C to +150C (Tj) |
| Technology | SIPMOS (planar enhancement mode) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | [DATA_NEEDED: VGS(th) typical and min/max] |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Compliant | — |
| MSL-Level | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Drain Tab Connection | SOT-223 tab is drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS P-Channel Small-Signal Power MOSFET |
| Channel Polarity | — | P-Channel |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | Yes / Compliant |
| Pin-Anzahl | — | 4 (Gate, Drain, Drain, Source) |