BSP92PH6327XTSA1 vs BSP135H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSP92PH6327XTSA1 von Infineon und BSP135H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSP92PH6327XTSA1 | BSP135H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,31 | $0,43 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS P-Channel Small-Signal Power MOSFET | — |
| Transistortyp | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -250 V | 600 V |
| Continuous Drain Current (ID) | -260 mA (Ta) | 120 mA |
| Power Dissipation (PD) | 1.8 W (Ta) | 1.8 W |
| Gehäuse | PG-SOT223-4 (SOT-223-4) | PG-SOT223-4 (SOT-223-3 plus tab) |
| Montageart | Surface Mount | Surface Mount |
| Channel Polarity | P-Channel | — |
| Betriebstemperatur | -55C to +150C (Tj) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | Yes / Compliant | — |
| MSL-Level | 1 (unlimited) | 1 |
| Pin-Anzahl | 4 (Gate, Drain, Drain, Source) | — |
| Part Number | — | BSP135H6327XTSA1 |
| FET Type | — | N-Channel, Depletion Mode |
| On-Resistance RDS(on) max | — | 45 ohm at VGS = 0 V |
| On-Resistance RDS(on) | — | 25 ohm (typical, per digchip) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Operating Mode | — | Normally ON (depletion) |
| Technology | — | SIPMOS (planar DMOS) |
| Betriebstemperaturbereich | — | -55C to +150C (junction, typical) |
| RoHS-Status | — | Compliant |