BSR315PH6327XTSA1 vs BSS214NWH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSR315PH6327XTSA1 von Infineon und BSS214NWH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSR315PH6327XTSA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,22 | $0,15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR315PH6327XTSA1 | BSS214NWH6327XTSA1 |
| Series | OptiMOS P-Channel | OptiMOS |
| FET Type | P-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) | -620 mA (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-State Resistance (RDS(on)) | 800 mOhm @ -620 mA, -10 V | — |
| Gate Threshold Voltage (VGS(th)) | ±20 V (max VGS) | — |
| Input Capacitance (Ciss) | 176 pF @ 25 V | — |
| Total Gate Charge (Qg) | 6 nC @ 10 V | — |
| Betriebstemperaturbereich | -55 C to +150 C (TJ) | — |
| Gehäuse | PG-SC59-3 / SOT-23-3 | PG-SOT323 (SOT-323-3) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 | — |
| Packaging | Tape & Reel (TR) | — |
| RoHS-Status | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product family marking) | — |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Betriebstemperatur | — | -55C to +150C (junction) |
| Qualification | — | AEC-Q101 (Automotive) |
| Lead-Free | — | Yes |