BSR315PH6327XTSA1 vs BSS214NWH6327XTSA1 对比

详细并排对比 BSR315PH6327XTSA1 出自 Infineon 和 BSS214NWH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSR315PH6327XTSA1 BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 - 60V P-Channel OptiMOS MOSFET | Infineon

BSR315PH6327XTSA1 ✓ 量产中
Infineon
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 - 20V N-Ch 1.5A MOSFET SOT-323 | Infineon

BSS214NWH6327XTSA1 ✓ 量产中

规格对比

参数 BSR315PH6327XTSA1 BSS214NWH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.22 $0.15
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR315PH6327XTSA1 BSS214NWH6327XTSA1
Series OptiMOS P-Channel OptiMOS
FET Type P-Channel, Enhancement Mode N-Channel
Drain-Source Voltage (VDS) -60 V —
Continuous Drain Current (ID) -620 mA (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
On-State Resistance (RDS(on)) 800 mOhm @ -620 mA, -10 V —
Gate Threshold Voltage (VGS(th)) ±20 V (max VGS) —
Input Capacitance (Ciss) 176 pF @ 25 V —
Total Gate Charge (Qg) 6 nC @ 10 V —
工作温度范围 -55 C to +150 C (TJ) —
封装 PG-SC59-3 / SOT-23-3 PG-SOT323 (SOT-323-3)
安装类型 Surface Mount Surface Mount
引脚数量 3 —
Packaging Tape & Reel (TR) —
RoHS 状态 Compliant Compliant
Automotive Qualified Yes (per Infineon product family marking) —
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) — 20 V
Continuous Drain Current (Id) @ 25C — 1.5 A
Rds(on) Max @ Vgs=4.5V — 250 mOhm
Drive Voltage (Max Rds On, Min Rds On) — 2.5 V, 4.5 V
Power Dissipation (Pd) @ Ta=25C — 500 mW
工作温度 — -55C to +150C (junction)
Qualification — AEC-Q101 (Automotive)
Lead-Free — Yes

数据手册与资源

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