BSS214NH6327XTSA1 vs BSP149H6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS214NH6327XTSA1 von Infineon und BSP149H6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS214NH6327XTSA1 | BSP149H6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,09 | $0,60 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | — |
| Continuous Drain Current (ID) | 1.5 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Drain-Source On-Resistance (RDS(on) max) | 250 mOhm at VGS = 4.5 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max values] | — |
| Gate-Source Voltage (VGS max) | ±12 V (recommended) | — |
| Technology | OptiMOS 2 (planar N-channel) | SIPMOS |
| Gehäuse | SOT-23 (PG-SOT23), 3 pins | PG-SOT223-4 (SOT-223-4) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Qualification | AEC-Q101 (Automotive) | — |
| Lead Finish | Pb-free lead plating (matte tin) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) | — |
| ESD Protection | Yes (gate ESD diode) | — |
| Transistor Polarity | — | N-Channel |
| Mode of Operation | — | Depletion Mode (normally ON) |
| Drain-Source Voltage VDS | — | 200 V |
| Continuous Drain Current ID | — | 660 mA (Ta) |
| Power Dissipation PD | — | 1.8 W (Ta) |
| On-State Resistance RDS(on) | — | 1 ohm (typ) |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: max VGS rating] |
| Betriebstemperatur | — | -55 C to +150 C (Tj) |
| Channel Count | — | 1 |
| Pin-Anzahl | — | 4 (G, D, S, tab) |
| Configuration | — | Single |