BSS606NH6327XTSA1 vs BSL606SNH6327XTSA1 Vergleich
Detaillierter Direktvergleich von BSS606NH6327XTSA1 von Infineon und BSL606SNH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS606NH6327XTSA1 | BSL606SNH6327XTSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,13 | $0,19 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS Small Signal/Power | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) | 3.2 A (Ta) | — |
| Power Dissipation (PD) | 1 W (Ta) | — |
| On-Resistance (RDS(on)) | 60 mΩ max @ VGS=10 V | — |
| Gehäuse | PG-SOT-89 (TO-243AA) | PG-TSOP6-6 (6-pin, SOT-23-6 compatible) |
| Montageart | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical/min] |
| Betriebs-Sperrschichttemperatur | -55°C to +150°C | — |
| Qualification | Automotive (per family page) | AEC-Q101 (Automotive) |
| RoHS-Status | Compliant | Compliant (Pb-free plating) |
| Lead-Free | Yes | — |
| MSL-Level | 1 (per SOT-89 family standard) | 1 (per JEDEC J-STD-020) |
| Reel Quantity | 1000 pcs | — |
| Technology | — | OptiMOS3 trench MOSFET |
| Continuous Drain Current (ID) at Ta | — | 4.5 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 60 mOhm (max, VGS = 10 V) |
| Total Power Dissipation (PD) at Ta | — | 2 W |
| Gate-Source Voltage (VGS) | — | +/-20 V (max) |
| Total Gate Charge (Qg) | — | 5.6 nC (max) |
| Betriebstemperaturbereich | — | -55C to +150C (Tj) |