BSS606NH6327XTSA1 vs BSL606SNH6327XTSA1 对比

详细并排对比 BSS606NH6327XTSA1 出自 Infineon 和 BSL606SNH6327XTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSS606NH6327XTSA1 BSS606NH6327XTSA1 - 60V 3.2A N-Ch MOSFET, SOT-89 | Infineon

BSS606NH6327XTSA1 - 60V 3.2A N-Ch MOSFET, SOT-89 | Infineon

BSS606NH6327XTSA1 ✓ 量产中
Infineon
BSL606SNH6327XTSA1 BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 - 60V N-Channel OptiMOS3 MOSFET | Infineon

BSL606SNH6327XTSA1 ✓ 量产中

规格对比

参数 BSS606NH6327XTSA1 BSL606SNH6327XTSA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.13 $0.19
Manufacturer Infineon Technologies —
Product Family OptiMOS Small Signal/Power —
晶体管类型 N-Channel MOSFET N-Channel MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) 3.2 A (Ta) —
Power Dissipation (PD) 1 W (Ta) —
On-Resistance (RDS(on)) 60 mΩ max @ VGS=10 V —
封装 PG-SOT-89 (TO-243AA) PG-TSOP6-6 (6-pin, SOT-23-6 compatible)
安装类型 Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] [DATA_NEEDED: VGS(th) typical/min]
工作结温 -55°C to +150°C —
Qualification Automotive (per family page) AEC-Q101 (Automotive)
RoHS 状态 Compliant Compliant (Pb-free plating)
Lead-Free Yes —
MSL 等级 1 (per SOT-89 family standard) 1 (per JEDEC J-STD-020)
Reel Quantity 1000 pcs —
Technology — OptiMOS3 trench MOSFET
Continuous Drain Current (ID) at Ta — 4.5 A
Static Drain-Source On-Resistance (RDS(on)) — 60 mOhm (max, VGS = 10 V)
Total Power Dissipation (PD) at Ta — 2 W
Gate-Source Voltage (VGS) — +/-20 V (max)
Total Gate Charge (Qg) — 5.6 nC (max)
工作温度范围 — -55C to +150C (Tj)

数据手册与资源

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