BSS806NEH6327XTSA1 vs BSS126H6327XTSA2 Vergleich
Detaillierter Direktvergleich von BSS806NEH6327XTSA1 von Infineon und BSS126H6327XTSA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS806NEH6327XTSA1 | BSS126H6327XTSA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,14 | $0,32 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS806NEH6327XTSA1 | — |
| Transistortyp | N-Channel MOSFET | — |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | — |
| Continuous Drain Current (ID) | 2.3 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | SOT-23-3 (PG-SOT23) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | 3 |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | -55C to +150C (junction, typical) |
| FET Type | — | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| Continuous Drain Current (ID) at Ta | — | 21 mA |
| Power Dissipation (PD) at Ta | — | 500 mW |
| On-Resistance (RDS(on)) Max | — | 500 ohm (typical for depletion-mode) |
| Gate-Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max/min] |
| Technology | — | SIPMOS (DMOS) |
| Configuration | — | Single |
| Channel Mode | — | Depletion (normally-on at VGS = 0) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |
| Halogenfrei | — | Yes (Infineon 'green' package) |