BSS83PH6327XTSA1 vs 2N7002H6327XTSA2 Vergleich
Detaillierter Direktvergleich von BSS83PH6327XTSA1 von Infineon und 2N7002H6327XTSA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSS83PH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,11 | $0,08 |
| FET Type | P-Channel | — |
| Technology | MOSFET (Metal-Oxide Semiconductor) | OptiMOS (Planar) |
| Drain-Source Voltage (VDS) | -60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 330 mA | — |
| Pulsed Drain Current (IDM) | 1.3 A | — |
| Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 2.0 ohm (max) | — |
| Gate-Source Threshold Voltage (VGS(th)) | -1 V to -2.5 V (typ) | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Power Dissipation (PD) at TA=25C | 360 mW | — |
| Betriebs-Sperrschichttemperatur | -55 C to +150 C | — |
| Gehäuse | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Montageart | Surface Mount | Surface Mount |
| Qualification | Automotive grade per Infineon | Industrial / Commercial Grade |
| Process Technology | SIPMOS / OptiMOS | — |
| RoHS-Status | Compliant | Compliant |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Betriebstemperaturbereich | — | -55C to +150C (Tj) |
| Channel Mode | — | Enhancement |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |