BSZ018NE2LSATMA1 vs IPD90P04P405ATMA2 Vergleich

Detaillierter Direktvergleich von BSZ018NE2LSATMA1 von Infineon und IPD90P04P405ATMA2 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BSZ018NE2LSATMA1 IPD90P04P405ATMA2
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,31 $0,69
Manufacturer Infineon Technologies —
Product Family OptiMOS 25V —
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 25 V -40 V
Continuous Drain Current (TA) 23 A —
Continuous Drain Current (TC) 40 A —
Power Dissipation (TA) 2.1 W —
Power Dissipation (TC) 69 W —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) typical at VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Gate Charge Qg [DATA_NEEDED: total gate charge at VGS=10V] —
Betriebstemperaturbereich -55C to +150C -55 °C to +175 °C (Tj)
Gehäuse PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TO252-3-313 (DPAK, surface mount)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
RoHS-Status Compliant Compliant
Lead-Free Yes —
Halogenfrei Yes —
Polarity — P-Channel
Continuous Drain Current (ID, Tc) — -90 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc) — 125 W
On-Resistance RDS(on) at VGS = -10 V — 4.7 mΩ (typical)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total]
Pin-Anzahl — 3 (Gate, Drain, Source)
Process Technology — OptiMOS-P2 (trench + field plate)

Datenblätter & Ressourcen

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