BSZ018NE2LSATMA1 vs IPD90P04P405ATMA2 Comparaison
Comparaison détaillée côte à côte de BSZ018NE2LSATMA1 par Infineon et IPD90P04P405ATMA2 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | BSZ018NE2LSATMA1 | IPD90P04P405ATMA2 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,31 | $0,69 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | -40 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Plage de température de fonctionnement | -55C to +150C | -55 °C to +175 °C (Tj) |
| Boîtier | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TO252-3-313 (DPAK, surface mount) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Sans halogène | Yes | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Nombre de broches | — | 3 (Gate, Drain, Source) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |