BSZ018NE2LSATMA1 vs IPD90P04P405ATMA2 对比
详细并排对比 BSZ018NE2LSATMA1 出自 Infineon 和 IPD90P04P405ATMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSZ018NE2LSATMA1 | IPD90P04P405ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.31 | $0.69 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | -40 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| 工作温度范围 | -55C to +150C | -55 °C to +175 °C (Tj) |
| 封装 | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TO252-3-313 (DPAK, surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) range] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| 引脚数量 | — | 3 (Gate, Drain, Source) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |