BSZ150N10LS3GATMA1 vs BSC100N10NSFGATMA1 Vergleich
Detaillierter Direktvergleich von BSZ150N10LS3GATMA1 von Infineon und BSC100N10NSFGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BSZ150N10LS3GATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $1,49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 | — |
| Technology / Family | OptiMOS 3 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25 °C) | 40 A | — |
| On-Resistance RDS(on) max | 15 mΩ | — |
| Power Dissipation (TA=25 °C) | 2.1 W | — |
| Verlustleistung (TC=25°C) | 63 W | — |
| Gehäuse | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Montageart | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 °C to +150 °C | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 °C peak reflow compatible) | — |
| MSL-Level | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Betriebstemperaturbereich | — | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |