BSZ150N10LS3GATMA1 vs BSC100N10NSFGATMA1 对比
详细并排对比 BSZ150N10LS3GATMA1 出自 Infineon 和 BSC100N10NSFGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ 量产中规格对比
| 参数 | BSZ150N10LS3GATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $1.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 | — |
| Technology / Family | OptiMOS 3 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25 °C) | 40 A | — |
| On-Resistance RDS(on) max | 15 mΩ | — |
| Power Dissipation (TA=25 °C) | 2.1 W | — |
| 功耗（TC=25°C） | 63 W | — |
| 封装 | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| 安装类型 | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 °C to +150 °C | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 °C peak reflow compatible) | — |
| MSL 等级 | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| 工作温度范围 | — | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |