BSZ150N10LS3GATMA1 vs BSC100N10NSFGATMA1 Comparison
Detailed side-by-side comparison of BSZ150N10LS3GATMA1 by Infineon and BSC100N10NSFGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ150N10LS3GATMA1
BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon
BSZ150N10LS3GATMA1 β ActiveInfineon
BSC100N10NSFGATMA1
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΞ© | Infineon
BSC100N10NSFGATMA1 β ActiveSpecification Comparison
| Parameter | BSZ150N10LS3GATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $1.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 | β |
| Technology / Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25 Β°C) | 40 A | β |
| On-Resistance RDS(on) max | 15 mΞ© | β |
| Power Dissipation (TA=25 Β°C) | 2.1 W | β |
| Power Dissipation (TC=25 Β°C) | 63 W | β |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 Β°C to +150 Β°C | β |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 Β°C peak reflow compatible) | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | β |
| Series | β | OptiMOS |
| FET Type | β | N-Channel |
| Technology | β | MOSFET (Metal Oxide) |
| Continuous Drain Current (ID), Ta | β | 11.4 A |
| Continuous Drain Current (ID), Tc | β | 90 A |
| Power Dissipation (PD), Tc | β | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | β | 10 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th) value] |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | β | 10 V (for rated RDS(on)) |