BSZ180P03NS3EGATMA1 vs IPD380P06NMATMA1 Vergleich
Detaillierter Direktvergleich von BSZ180P03NS3EGATMA1 von Infineon und IPD380P06NMATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
BSZ180P03NS3EGATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | BSZ180P03NS3EGATMA1 | IPD380P06NMATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,45 | $0,49 |
| Transistortyp | P-Channel MOSFET | — |
| Technology | OptiMOS P3 | OptiMOS P-channel trench |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) - Ta | 9 A | — |
| Continuous Drain Current (ID) - Tc | 39.5 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance (RDS(on)) max | 18 mΩ @ VGS = -10 V | — |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (QG) total | [DATA_NEEDED: QG total] | — |
| Power Dissipation (Ta) | 2.1 W | — |
| Power Dissipation (Tc) | 40 W | 125 W |
| Betriebstemperaturbereich | -55°C to +150°C (TJ) | -55 C to +150 C (junction) |
| Gehäuse | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TO252-3 (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 |
| Lead-Free | Yes | Yes |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage V(BR)DSS | — | 60 V |
| Kontinuierlicher Drain-Strom (TC=25°C) | — | 35 A |
| Gate Drive | — | Logic-level compatible |
| Avalanche Rated | — | Yes (per manufacturer datasheet) |
| Target Applications | — | Reverse-polarity protection, load switch, BMS, high-side switch |
| Automotive Qualified | — | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] |