BSZ180P03NS3EGATMA1 vs IPD380P06NMATMA1 Comparison
Detailed side-by-side comparison of BSZ180P03NS3EGATMA1 by Infineon and IPD380P06NMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ180P03NS3EGATMA1 - 30V P-Channel OptiMOS P3 MOSFET | Infineon
BSZ180P03NS3EGATMA1 β Active
Specification Comparison
| Parameter | BSZ180P03NS3EGATMA1 | IPD380P06NMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.45 | $0.49 |
| Transistor Type | P-Channel MOSFET | β |
| Technology | OptiMOS P3 | OptiMOS P-channel trench |
| Drain-Source Voltage (VDS) | -30 V | β |
| Continuous Drain Current (ID) - Ta | 9 A | β |
| Continuous Drain Current (ID) - Tc | 39.5 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-State Resistance (RDS(on)) max | 18 mΞ© @ VGS = -10 V | β |
| Gate-Source Threshold (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate Charge (QG) total | [DATA_NEEDED: QG total] | β |
| Power Dissipation (Ta) | 2.1 W | β |
| Power Dissipation (Tc) | 40 W | 125 W |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | -55 C to +150 C (junction) |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 |
| Lead-Free | Yes | Yes |
| Polarity / Channel Type | β | P-Channel |
| Drain-Source Voltage V(BR)DSS | β | 60 V |
| Continuous Drain Current (Tc=25 C) | β | 35 A |
| Gate Drive | β | Logic-level compatible |
| Avalanche Rated | β | Yes (per manufacturer datasheet) |
| Target Applications | β | Reverse-polarity protection, load switch, BMS, high-side switch |
| Automotive Qualified | β | Not specified in provided data [DATA_NEEDED: AEC-Q100 grade] |