BSZ215CHXTMA1 vs BSZ0501NSIATMA1 Vergleich
Detaillierter Direktvergleich von BSZ215CHXTMA1 von Infineon und BSZ0501NSIATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSZ215CHXTMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,29 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel and P-Channel Complementary | N-Channel |
| Drain-Source Voltage (Vds) | 20 V | 30 V |
| Continuous Drain Current - N-channel (Id) | 5.1 A | — |
| Continuous Drain Current - P-channel (Id) | 3.2 A | — |
| Power Dissipation (Pd) | 2.5 W | — |
| On-State Resistance - N-channel max (Rds(on)) | [DATA_NEEDED: N-channel Rds(on)] | — |
| On-State Resistance - P-channel max (Rds(on)) | [DATA_NEEDED: P-channel Rds(on)] | — |
| Technology | OptiMOS (enhancement mode) | — |
| Gehäuse | PG-TSDSON-8 (PQFN 3.3 x 3.3) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C | [DATA_NEEDED: Tj max] |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes (100% lead-free) | — |
| Avalanche Rated | Yes | — |
| Part Number | — | BSZ0501NSIATMA1 |
| Product Family | — | OptiMOS 5 (25V/30V) |
| Continuous Drain Current (Id) at TA=25C | — | 25 A |
| Continuous Drain Current (Id) at TC=25C | — | 40 A |
| Power Dissipation (Pd) at TA=25C | — | 2.1 W |
| Power Dissipation (Pd) at TC=25C | — | 50 W |
| Operating Mode | — | Enhancement Mode |
| Configuration | — | Single with built-in diode |
| Number of Terminals | — | 8 |
| JESD-609 Code | — | e3 (matte tin) |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at Vgs=10V (typ) | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |