BSZ215CHXTMA1 vs BSZ0501NSIATMA1 Comparación
Comparación detallada lado a lado de BSZ215CHXTMA1 por Infineon y BSZ0501NSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ215CHXTMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,29 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel and P-Channel Complementary | N-Channel |
| Drain-Source Voltage (Vds) | 20 V | 30 V |
| Continuous Drain Current - N-channel (Id) | 5.1 A | — |
| Continuous Drain Current - P-channel (Id) | 3.2 A | — |
| Power Dissipation (Pd) | 2.5 W | — |
| On-State Resistance - N-channel max (Rds(on)) | [DATA_NEEDED: N-channel Rds(on)] | — |
| On-State Resistance - P-channel max (Rds(on)) | [DATA_NEEDED: P-channel Rds(on)] | — |
| Technology | OptiMOS (enhancement mode) | — |
| Encapsulado | PG-TSDSON-8 (PQFN 3.3 x 3.3) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +150C | [DATA_NEEDED: Tj max] |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes (100% lead-free) | — |
| Avalanche Rated | Yes | — |
| Part Number | — | BSZ0501NSIATMA1 |
| Product Family | — | OptiMOS 5 (25V/30V) |
| Continuous Drain Current (Id) at TA=25C | — | 25 A |
| Continuous Drain Current (Id) at TC=25C | — | 40 A |
| Power Dissipation (Pd) at TA=25C | — | 2.1 W |
| Power Dissipation (Pd) at TC=25C | — | 50 W |
| Operating Mode | — | Enhancement Mode |
| Configuration | — | Single with built-in diode |
| Number of Terminals | — | 8 |
| JESD-609 Code | — | e3 (matte tin) |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Rds(on) at Vgs=10V (typ) | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |