BSZ215CHXTMA1 vs BSZ0501NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ215CHXTMA1 by Infineon and BSZ0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ215CHXTMA1
BSZ215CHXTMA1 - 20V N+P Complementary MOSFET | Infineon
BSZ215CHXTMA1 β ActiveInfineon
BSZ0501NSIATMA1
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ215CHXTMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.29 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| FET Type | N-Channel and P-Channel Complementary | N-Channel |
| Drain-Source Voltage (Vds) | 20 V | 30 V |
| Continuous Drain Current - N-channel (Id) | 5.1 A | β |
| Continuous Drain Current - P-channel (Id) | 3.2 A | β |
| Power Dissipation (Pd) | 2.5 W | β |
| On-State Resistance - N-channel max (Rds(on)) | [DATA_NEEDED: N-channel Rds(on)] | β |
| On-State Resistance - P-channel max (Rds(on)) | [DATA_NEEDED: P-channel Rds(on)] | β |
| Technology | OptiMOS (enhancement mode) | β |
| Package | PG-TSDSON-8 (PQFN 3.3 x 3.3) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | [DATA_NEEDED: Tj max] |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes (100% lead-free) | β |
| Avalanche Rated | Yes | β |
| Part Number | β | BSZ0501NSIATMA1 |
| Product Family | β | OptiMOS 5 (25V/30V) |
| Continuous Drain Current (Id) at TA=25C | β | 25 A |
| Continuous Drain Current (Id) at TC=25C | β | 40 A |
| Power Dissipation (Pd) at TA=25C | β | 2.1 W |
| Power Dissipation (Pd) at TC=25C | β | 50 W |
| Operating Mode | β | Enhancement Mode |
| Configuration | β | Single with built-in diode |
| Number of Terminals | β | 8 |
| JESD-609 Code | β | e3 (matte tin) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Rds(on) at Vgs=10V (typ) | β | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |