BTG70902EPLXUMA1 vs BTS51202EKAXUMA1 Vergleich
Detaillierter Direktvergleich von BTG70902EPLXUMA1 von Infineon und BTS51202EKAXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BTG70902EPLXUMA1 - 2A PROFET+2 12V Smart High-Side Switch | Infineon
BTG70902EPLXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | BTG70902EPLXUMA1 | BTS51202EKAXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,99 | $1,68 |
| Product Family | PROFET+2 12V | — |
| Funktion | Smart High-Side Power Switch | — |
| Number of Channels | 1 | 2 |
| Input-to-Output Ratio | 1:1 | — |
| Ausgangskonfiguration | N-Channel High-Side | — |
| Continuous Load Current | 2 A | — |
| Nominal Operating Voltage | 12 V (automotive bus) | — |
| Operating Voltage Range | [DATA_NEEDED: Vbb operating range min/max] | — |
| On-State Resistance (Ron) | [DATA_NEEDED: Rdson typ/max in mohm] | — |
| Strombegrenzung | Fixed (value not specified in retrieved data) | — |
| Protection Features | Overcurrent, Short-Circuit, Over-Temperature (latch), Over-Voltage, Under-Voltage Lockout, Reverse Battery | — |
| Diagnostic Output | DEN pin (current sense / fault flag) | Yes (status feedback pin) |
| Enable Input | IN pin (active-high) | — |
| Channel Select | DSEL pin | — |
| Slew Rate Control | Yes (internal, for EMI) | — |
| Gehäuse | PG-TSDSO-14 (exposed pad) | PG-DSO-14-40-EP (14-pin SOIC with exposed pad) |
| Betriebs-Sperrschichttemperatur | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 (PROFET+2 family targeted at automotive) | — |
| RoHS-Status | Compliant | Compliant |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | — |
| Topologie | — | Dual High-Side Switch (2 channels) |
| Technology | — | Smart6 (N-channel vertical MOSFET with charge pump) |
| On-State Resistance (RDS(on)) | — | 120 mΩ (typical per channel) |
| Continuous Output Current | — | 2 A per channel (typical 2.5 A) |
| Operating Voltage (Vbb) | — | 8 V to 18 V |
| Load Type | — | Lamps up to 1×10 W, LEDs, resistive/inductive loads |
| Betriebstemperatur | — | -40 °C to +150 °C |
| Maximum Power Dissipation | — | 1800 mW |
| Integrated Protection | — | Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery |
| Charge Pump | — | Integrated |
| Automotive Qualified | — | Yes |