BTG70902EPLXUMA1 vs BTS51202EKAXUMA1 Comparaison
Comparaison détaillée côte à côte de BTG70902EPLXUMA1 par Infineon et BTS51202EKAXUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BTG70902EPLXUMA1 - 2A PROFET+2 12V Smart High-Side Switch | Infineon
BTG70902EPLXUMA1 ✓ ActifComparaison des spécifications
| Paramètre | BTG70902EPLXUMA1 | BTS51202EKAXUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,99 | $1,68 |
| Product Family | PROFET+2 12V | — |
| Fonction | Smart High-Side Power Switch | — |
| Number of Channels | 1 | 2 |
| Input-to-Output Ratio | 1:1 | — |
| Configuration de sortie | N-Channel High-Side | — |
| Continuous Load Current | 2 A | — |
| Nominal Operating Voltage | 12 V (automotive bus) | — |
| Operating Voltage Range | [DATA_NEEDED: Vbb operating range min/max] | — |
| On-State Resistance (Ron) | [DATA_NEEDED: Rdson typ/max in mohm] | — |
| Limitation de courant | Fixed (value not specified in retrieved data) | — |
| Protection Features | Overcurrent, Short-Circuit, Over-Temperature (latch), Over-Voltage, Under-Voltage Lockout, Reverse Battery | — |
| Diagnostic Output | DEN pin (current sense / fault flag) | Yes (status feedback pin) |
| Enable Input | IN pin (active-high) | — |
| Channel Select | DSEL pin | — |
| Slew Rate Control | Yes (internal, for EMI) | — |
| Boîtier | PG-TSDSO-14 (exposed pad) | PG-DSO-14-40-EP (14-pin SOIC with exposed pad) |
| Température de jonction en fonctionnement | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 (PROFET+2 family targeted at automotive) | — |
| Statut RoHS | Compliant | Compliant |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | — |
| Topologie | — | Dual High-Side Switch (2 channels) |
| Technology | — | Smart6 (N-channel vertical MOSFET with charge pump) |
| On-State Resistance (RDS(on)) | — | 120 mΩ (typical per channel) |
| Continuous Output Current | — | 2 A per channel (typical 2.5 A) |
| Operating Voltage (Vbb) | — | 8 V to 18 V |
| Load Type | — | Lamps up to 1×10 W, LEDs, resistive/inductive loads |
| Température de fonctionnement | — | -40 °C to +150 °C |
| Maximum Power Dissipation | — | 1800 mW |
| Integrated Protection | — | Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery |
| Charge Pump | — | Integrated |
| Automotive Qualified | — | Yes |