BTG70902EPLXUMA1 vs BTS51202EKAXUMA1 비교

다음의 상세 나란히 비교: BTG70902EPLXUMA1 제조: Infineon 및 BTS51202EKAXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTG70902EPLXUMA1 BTS51202EKAXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.99 $1.68
Product Family PROFET+2 12V —
기능 Smart High-Side Power Switch —
Number of Channels 1 2
Input-to-Output Ratio 1:1 —
출력 구성 N-Channel High-Side —
Continuous Load Current 2 A —
Nominal Operating Voltage 12 V (automotive bus) —
Operating Voltage Range [DATA_NEEDED: Vbb operating range min/max] —
On-State Resistance (Ron) [DATA_NEEDED: Rdson typ/max in mohm] —
전류 제한 Fixed (value not specified in retrieved data) —
Protection Features Overcurrent, Short-Circuit, Over-Temperature (latch), Over-Voltage, Under-Voltage Lockout, Reverse Battery —
Diagnostic Output DEN pin (current sense / fault flag) Yes (status feedback pin)
Enable Input IN pin (active-high) —
Channel Select DSEL pin —
Slew Rate Control Yes (internal, for EMI) —
패키지 PG-TSDSO-14 (exposed pad) PG-DSO-14-40-EP (14-pin SOIC with exposed pad)
동작 접합 온도 -40 C to +150 C —
Automotive Qualification AEC-Q100 (PROFET+2 family targeted at automotive) —
RoHS 상태 Compliant Compliant
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL rating per JEDEC J-STD-020] —
토폴로지 — Dual High-Side Switch (2 channels)
Technology — Smart6 (N-channel vertical MOSFET with charge pump)
On-State Resistance (RDS(on)) — 120 mΩ (typical per channel)
Continuous Output Current — 2 A per channel (typical 2.5 A)
Operating Voltage (Vbb) — 8 V to 18 V
Load Type — Lamps up to 1×10 W, LEDs, resistive/inductive loads
동작 온도 — -40 °C to +150 °C
Maximum Power Dissipation — 1800 mW
Integrated Protection — Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery
Charge Pump — Integrated
Automotive Qualified — Yes

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