BTG70902EPLXUMA1 vs BTS51202EKAXUMA1 Comparación
Comparación detallada lado a lado de BTG70902EPLXUMA1 por Infineon y BTS51202EKAXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BTG70902EPLXUMA1 - 2A PROFET+2 12V Smart High-Side Switch | Infineon
BTG70902EPLXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BTG70902EPLXUMA1 | BTS51202EKAXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,99 | $1,68 |
| Product Family | PROFET+2 12V | — |
| Función | Smart High-Side Power Switch | — |
| Number of Channels | 1 | 2 |
| Input-to-Output Ratio | 1:1 | — |
| Configuración de salida | N-Channel High-Side | — |
| Continuous Load Current | 2 A | — |
| Nominal Operating Voltage | 12 V (automotive bus) | — |
| Operating Voltage Range | [DATA_NEEDED: Vbb operating range min/max] | — |
| On-State Resistance (Ron) | [DATA_NEEDED: Rdson typ/max in mohm] | — |
| Limitación de corriente | Fixed (value not specified in retrieved data) | — |
| Protection Features | Overcurrent, Short-Circuit, Over-Temperature (latch), Over-Voltage, Under-Voltage Lockout, Reverse Battery | — |
| Diagnostic Output | DEN pin (current sense / fault flag) | Yes (status feedback pin) |
| Enable Input | IN pin (active-high) | — |
| Channel Select | DSEL pin | — |
| Slew Rate Control | Yes (internal, for EMI) | — |
| Encapsulado | PG-TSDSO-14 (exposed pad) | PG-DSO-14-40-EP (14-pin SOIC with exposed pad) |
| Temperatura de unión de funcionamiento | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 (PROFET+2 family targeted at automotive) | — |
| Estado RoHS | Compliant | Compliant |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | — |
| Topología | — | Dual High-Side Switch (2 channels) |
| Technology | — | Smart6 (N-channel vertical MOSFET with charge pump) |
| On-State Resistance (RDS(on)) | — | 120 mΩ (typical per channel) |
| Continuous Output Current | — | 2 A per channel (typical 2.5 A) |
| Operating Voltage (Vbb) | — | 8 V to 18 V |
| Load Type | — | Lamps up to 1×10 W, LEDs, resistive/inductive loads |
| Temperatura de funcionamiento | — | -40 °C to +150 °C |
| Maximum Power Dissipation | — | 1800 mW |
| Integrated Protection | — | Over-current, Short-circuit, Over-temperature, Over-voltage, Under-voltage lockout, Reverse battery |
| Charge Pump | — | Integrated |
| Automotive Qualified | — | Yes |