BTH60801EPLXUMA1 vs BTM9011EPXUMA1 Vergleich

Detaillierter Direktvergleich von BTH60801EPLXUMA1 von Infineon und BTM9011EPXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTH60801EPLXUMA1 BTM9011EPXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Motor Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,74 $1,62
Product Type Smart High-Side Power Switch —
Number of Channels 1 —
Topologie High-Side N-Channel MOSFET with Charge Pump Full-bridge (H-bridge) with integrated power MOSFETs
On-State Resistance (RDS(on)) 80 mΩ (typical) —
Continuous Load Current 2.5 A —
Operating Voltage Range 4 V to 54 V —
Nominal Board Net 48 V (PROFET+ 48V family) —
Current Limitation Adjustable Min, integrated
Diagnostic Output Current Sense (IS) pin —
Input Logic Active High and Active Low —
Protection Features Overtemperature, Overvoltage, Undervoltage, Short Circuit —
Gehäuse PG-TSDSO-14 (exposed pad) PG-TSDSO-14 with exposed pad
Betriebstemperaturbereich -40 °C to +150 °C (Tj) —
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q100
RoHS-Status Compliant —
Output Current Limit — 10 A (typ)
Path Resistance (per HS+LS) — 175 mΩ typical at 25 °C
Pulse Current (tpulse ≤ 1 s at 85 °C) — 5.2 A
Pulse Current (tpulse ≤ 10 s at 85 °C) — 4.2 A
Supply Voltage Range (normal) — 7 V to 18 V
Supply Voltage Range (extended) — 4.5 V to 40 V
PWM Frequency — up to 20 kHz
Schnittstelle — SPI (status, configuration, diagnostics)
Technology — BCD (Bipolar-CMOS-DMOS) monolithic
Operating Temperature (junction) — -40 °C to +150 °C

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern