BTH60801EPLXUMA1 vs BTM9011EPXUMA1 Comparación
Comparación detallada lado a lado de BTH60801EPLXUMA1 por Infineon y BTM9011EPXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BTH60801EPLXUMA1 | BTM9011EPXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Motor Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,74 | $1,62 |
| Product Type | Smart High-Side Power Switch | — |
| Number of Channels | 1 | — |
| Topología | High-Side N-Channel MOSFET with Charge Pump | Full-bridge (H-bridge) with integrated power MOSFETs |
| On-State Resistance (RDS(on)) | 80 mΩ (typical) | — |
| Continuous Load Current | 2.5 A | — |
| Operating Voltage Range | 4 V to 54 V | — |
| Nominal Board Net | 48 V (PROFET+ 48V family) | — |
| Current Limitation | Adjustable | Min, integrated |
| Diagnostic Output | Current Sense (IS) pin | — |
| Input Logic | Active High and Active Low | — |
| Protection Features | Overtemperature, Overvoltage, Undervoltage, Short Circuit | — |
| Encapsulado | PG-TSDSO-14 (exposed pad) | PG-TSDSO-14 with exposed pad |
| Rango de temperatura de funcionamiento | -40 °C to +150 °C (Tj) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q100 |
| Estado RoHS | Compliant | — |
| Output Current Limit | — | 10 A (typ) |
| Path Resistance (per HS+LS) | — | 175 mΩ typical at 25 °C |
| Pulse Current (tpulse ≤ 1 s at 85 °C) | — | 5.2 A |
| Pulse Current (tpulse ≤ 10 s at 85 °C) | — | 4.2 A |
| Supply Voltage Range (normal) | — | 7 V to 18 V |
| Supply Voltage Range (extended) | — | 4.5 V to 40 V |
| PWM Frequency | — | up to 20 kHz |
| Interfaz | — | SPI (status, configuration, diagnostics) |
| Technology | — | BCD (Bipolar-CMOS-DMOS) monolithic |
| Operating Temperature (junction) | — | -40 °C to +150 °C |