BTH60801EPLXUMA1 vs BTM9011EPXUMA1 Comparação

Comparação detalhada lado a lado de BTH60801EPLXUMA1 por Infineon e BTM9011EPXUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro BTH60801EPLXUMA1 BTM9011EPXUMA1
Marca Infineon Infineon
Categoria Power MOSFET Drivers Motor Drivers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $1,74 $1,62
Product Type Smart High-Side Power Switch —
Number of Channels 1 —
Topologia High-Side N-Channel MOSFET with Charge Pump Full-bridge (H-bridge) with integrated power MOSFETs
On-State Resistance (RDS(on)) 80 mΩ (typical) —
Continuous Load Current 2.5 A —
Operating Voltage Range 4 V to 54 V —
Nominal Board Net 48 V (PROFET+ 48V family) —
Current Limitation Adjustable Min, integrated
Diagnostic Output Current Sense (IS) pin —
Input Logic Active High and Active Low —
Protection Features Overtemperature, Overvoltage, Undervoltage, Short Circuit —
Encapsulamento PG-TSDSO-14 (exposed pad) PG-TSDSO-14 with exposed pad
Faixa de temperatura de operação -40 °C to +150 °C (Tj) —
Tipo de montagem Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q100
Status RoHS Compliant —
Output Current Limit — 10 A (typ)
Path Resistance (per HS+LS) — 175 mΩ typical at 25 °C
Pulse Current (tpulse ≤ 1 s at 85 °C) — 5.2 A
Pulse Current (tpulse ≤ 10 s at 85 °C) — 4.2 A
Supply Voltage Range (normal) — 7 V to 18 V
Supply Voltage Range (extended) — 4.5 V to 40 V
PWM Frequency — up to 20 kHz
Interface — SPI (status, configuration, diagnostics)
Technology — BCD (Bipolar-CMOS-DMOS) monolithic
Operating Temperature (junction) — -40 °C to +150 °C

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