BTH60801EPLXUMA1 vs BTM9011EPXUMA1 비교

다음의 상세 나란히 비교: BTH60801EPLXUMA1 제조: Infineon 및 BTM9011EPXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTH60801EPLXUMA1 BTM9011EPXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Motor Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.74 $1.62
Product Type Smart High-Side Power Switch —
Number of Channels 1 —
토폴로지 High-Side N-Channel MOSFET with Charge Pump Full-bridge (H-bridge) with integrated power MOSFETs
On-State Resistance (RDS(on)) 80 mΩ (typical) —
Continuous Load Current 2.5 A —
Operating Voltage Range 4 V to 54 V —
Nominal Board Net 48 V (PROFET+ 48V family) —
Current Limitation Adjustable Min, integrated
Diagnostic Output Current Sense (IS) pin —
Input Logic Active High and Active Low —
Protection Features Overtemperature, Overvoltage, Undervoltage, Short Circuit —
패키지 PG-TSDSO-14 (exposed pad) PG-TSDSO-14 with exposed pad
동작 온도 범위 -40 °C to +150 °C (Tj) —
실장 유형 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q100
RoHS 상태 Compliant —
Output Current Limit — 10 A (typ)
Path Resistance (per HS+LS) — 175 mΩ typical at 25 °C
Pulse Current (tpulse ≤ 1 s at 85 °C) — 5.2 A
Pulse Current (tpulse ≤ 10 s at 85 °C) — 4.2 A
Supply Voltage Range (normal) — 7 V to 18 V
Supply Voltage Range (extended) — 4.5 V to 40 V
PWM Frequency — up to 20 kHz
인터페이스 — SPI (status, configuration, diagnostics)
Technology — BCD (Bipolar-CMOS-DMOS) monolithic
Operating Temperature (junction) — -40 °C to +150 °C

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