BTS3110NHUMA1 vs BSP316PH6327XTSA1 Vergleich

Detaillierter Direktvergleich von BTS3110NHUMA1 von Infineon und BSP316PH6327XTSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTS3110NHUMA1 BSP316PH6327XTSA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,82 $0,21
Product Type Smart Low-Side Power Switch —
Family Classic HITFET —
Number of Channels 1 —
Switch Type N-Channel (1:1) —
Maximum Drain-to-Source Voltage (VDS max) 42 V —
Continuous Drain Current 1.4 A —
On-Resistance (RDS(on) typ) 200 mOhm —
Input Logic Compatibility TTL / CMOS (3.3 V and 5 V) —
On-State Input Voltage (VIH) [DATA_NEEDED: VIH value] —
Off-State Input Voltage (VIL) [DATA_NEEDED: VIL value] —
Status Flag Output Open-drain diagnostic output —
Protection Features ESD, thermal shutdown, over-load current limit —
Betriebstemperaturbereich -40 C to +150 C -55 C to +150 C (junction)
Gehäuse PG-SOT223-4 (SOT-223-4) PG-SOT223-4 (TO-261-4)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] 1
RoHS-Status Compliant Compliant
Automotive Qualified Yes - 12 V automotive applications —
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -100 V
Continuous Drain Current (ID) at TA=25C — -680 mA
Total Power Dissipation (Ptot) at TA=25C — 1.8 W
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Anzahl der Pins — 3 + thermal tab
Channel Mode — Enhancement
Technology — SIPMOS (P-channel MOSFET)
Packaging — Tape & Reel (H6327 suffix)

Datenblätter & Ressourcen

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