EP3SE50F780C4N vs EP3SE110F780C4LN Vergleich

Detaillierter Direktvergleich von EP3SE50F780C4N von Intel und EP3SE110F780C4LN von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter EP3SE50F780C4N EP3SE110F780C4LN
Marke Intel Intel
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus NRND Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1.430,00 $3.450,00
Family Stratix III E Stratix III E
Logic Elements (LE) 47,500 107,500
Embedded Memory Bits 5,760,000 —
Embedded Memory (M9K/M144K blocks) 488 (per family datasheet) —
Number of LABs 1900 —
Maximum User I/Os 488 —
DSP Blocks (18x18 multipliers) 432 —
PLLs 12 (per family datasheet) —
Maximum Operating Frequency 717 MHz —
Transceiver Channels Up to 12 (per family, model-dependent) —
Transceiver Data Rate Up to 6.375 Gbps (per Stratix III E family) —
Process Node 40 nm —
Gehäuse 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch 780-BBGA, FCBGA (Fine-pitch)
Montageart Surface Mount (BGA) Surface Mount (SMT)
Versorgungsspannung Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail) —
Betriebstemperatur 0C to +85C (C4 commercial grade) 0C to +85C (Commercial)
Configuration Modes JTAG, Passive Serial, Fast Passive Parallel —
RoHS-Status Lead-free / RoHS compliant —
MSL-Level 3 (per JEDEC J-STD-020, FBGA package) 3 (per JEDEC J-STD-020)
Hard Memory Controller DDR2/DDR3 SDRAM (per Stratix III E family) —
Logic Array Blocks (LABs) — 4,300
Embedded Memory — 8,936,448 bits
User I/O Pins — 488
Supply Voltage Core — 0.9 V (typical)
Speed Grade — C4
Lead-Free / RoHS — Yes (N suffix)
Process Technology — 40 nm TSMC
DSP Blocks — Yes (18x18 multipliers)
Tray Packaging — Yes (per distributor listings)

Datenblätter & Ressourcen

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