FDD8880 vs FDD8896 Vergleich
Detaillierter Direktvergleich von FDD8880 von onsemi und FDD8896 von onsemi. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | FDD8880 | FDD8896 |
|---|---|---|
| Marke | onsemi | onsemi |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Ende des Lebenszyklus |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $0,62 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 13 A (Ta), 58 A (Tc) | — |
| On-Resistance (rDS(on)) | 9 mOhm max | — |
| Total Power Dissipation (PD) | 55 W (Tc) | — |
| Technology | PowerTrench | PowerTrench (trench MOSFET) |
| Gehäuse | TO-252AA (DPAK) | TO-252 (DPAK), 3-Pin (2+Tab) |
| Montageart | Surface Mount | Surface Mount |
| Configuration | Single FET | Single FET |
| Gate Charge (Qg) | [DATA_NEEDED: gate charge] | [DATA_NEEDED: Gate Charge] |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max] | — |
| Threshold Voltage (VGS th) | [DATA_NEEDED: threshold voltage] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Thermal Resistance (RthJA) | [DATA_NEEDED: thermal resistance] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| Lebenszyklusstatus | Last Shipments | — |
| Transistortyp | — | N-Channel PowerTrench MOSFET |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) at Ta | — | 17 A |
| Continuous Drain Current (Id) at Tc | — | 94 A |
| Drain-Source On-Resistance (rDS(ON)) | — | 5.7 mOhm |
| Power Dissipation (Pd) at Tc | — | 80 W |
| Gate-Source Voltage (Vgs) Max | — | [DATA_NEEDED: Vgs Max] |
| Pin-Anzahl | — | 3 |
| Typical Application | — | DC/DC converters, synchronous PWM controllers |
| Manufacturer | — | Fairchild Semiconductor (now onsemi) |
| Packing | — | Tape & Reel (T/R) |