FDD8880 vs FDD8896 Comparison

Detailed side-by-side comparison of FDD8880 by onsemi and FDD8896 by onsemi. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

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FDD8880 FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 - 30V 58A N-Ch PowerTrench MOSFET | onsemi

FDD8880 ⚠ Last Time Buy

Specification Comparison

Parameter FDD8880 FDD8896
Brand onsemi onsemi
Category MOSFETs MOSFETs
Lifecycle Status Last_time_buy Eol
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.62
Polarity N-Channel β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) 13 A (Ta), 58 A (Tc) β€”
On-Resistance (rDS(on)) 9 mOhm max β€”
Total Power Dissipation (PD) 55 W (Tc) β€”
Technology PowerTrench PowerTrench (trench MOSFET)
Package TO-252AA (DPAK) TO-252 (DPAK), 3-Pin (2+Tab)
Mounting Type Surface Mount Surface Mount
Configuration Single FET Single FET
Gate Charge (Qg) [DATA_NEEDED: gate charge] [DATA_NEEDED: Gate Charge]
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max] β€”
Threshold Voltage (VGS th) [DATA_NEEDED: threshold voltage] β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
Thermal Resistance (RthJA) [DATA_NEEDED: thermal resistance] β€”
RoHS Status [DATA_NEEDED: RoHS status] β€”
Lifecycle Status Last Shipments β€”
Transistor Type β€” N-Channel PowerTrench MOSFET
Drain-Source Voltage (Vdss) β€” 30 V
Continuous Drain Current (Id) at Ta β€” 17 A
Continuous Drain Current (Id) at Tc β€” 94 A
Drain-Source On-Resistance (rDS(ON)) β€” 5.7 mOhm
Power Dissipation (Pd) at Tc β€” 80 W
Gate-Source Voltage (Vgs) Max β€” [DATA_NEEDED: Vgs Max]
Pin Count β€” 3
Typical Application β€” DC/DC converters, synchronous PWM controllers
Manufacturer β€” Fairchild Semiconductor (now onsemi)
Packing β€” Tape & Reel (T/R)

Datasheets & Resources

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