FDS6575 vs IRF7416TRPBF Vergleich
Detaillierter Direktvergleich von FDS6575 von onsemi und IRF7416TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | FDS6575 | IRF7416TRPBF |
|---|---|---|
| Marke | onsemi | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,28 | $0,32 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) | -10 A | — |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| Gate-Schwellenspannung | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 61 nC |
| Technology | PowerTrench (rugged gate) | HEXFET (IR MOSFET) |
| Gehäuse | SOIC-8 (SO-8) | 8-SO (SOIC-8) |
| Montageart | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Configuration | Single MOSFET | — |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| RoHS-Status | Compliant | Compliant |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25C | — | -10 A |
| Pulsed Drain Current (IDM) | — | -50 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | -1 V to -3 V |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| Betriebs-Sperrschichttemperaturbereich | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| MSL-Level | — | 1 (unlimited) |