H5AN4G8NBJR-UHI vs H5AN4G8NBJR-RDC Vergleich
Detaillierter Direktvergleich von H5AN4G8NBJR-UHI von SK hynix und H5AN4G8NBJR-RDC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5AN4G8NBJR-UHI | H5AN4G8NBJR-RDC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,25 | $2,95 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Speicherorganisation | 512M x 8 | 512M x 8 |
| Speed Grade | DDR4-2400 (PC4-19200) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Gehäuse | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Grade | Industrial (-UHI suffix) | — |
| Datenrate | 2400 MT/s | [DATA_NEEDED: speed grade Mbps] |
| Schnittstelle | JEDEC DDR4 SDRAM | DDR4 (Double Data Rate IV) |
| Bank Architecture | DDR4 bank group architecture | 8 banks with 4 bank groups (x8) |
| Refresh | Self-refresh and auto-refresh support | Auto-refresh and self-refresh |
| Termination | On-die termination (ODT) | On-Die Termination (ODT) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | — |
| CAS-Latenz | [DATA_NEEDED: CAS latency at DDR4-2400] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Lead-Free & Halogen-Free (RoHS Compliant) |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Versorgungsspannung | — | [DATA_NEEDED: VDD supply voltage] |
| Temperature Grade | — | [DATA_NEEDED: operating temperature range] |
| Process Technology | — | CMOS |
| Manufacturer | — | SK hynix |
| Family Series | — | H5AN4G4/8/6NBJR |